Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

a) Top view SEM of flip chip NP micro-LED array; (b) cross-sectional

Highly Efficient Full‐Color Inorganic LEDs on a Single Wafer by Using Multiple Adhesive Bonding - Mun - 2021 - Advanced Materials Interfaces - Wiley Online Library

InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay

Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut Display and High-Speed Visible Light Communication

Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay

GaN-on-Silicon

a) L−I−V curves for InGaN/GaN LEDs on sapphire (diamonds) and